publication . Article . 2015

Markedly distinct growth characteristics of semipolar (112¯2) and (1¯1¯22¯) InGaN epitaxial layers

Junichi Nishinaka; Mitsuru Funato; Yoichi Kawakami;
  • Published: 23 Feb 2015 Journal: Applied Physics Letters, volume 106, page 82,105 (issn: 0003-6951, eissn: 1077-3118, Copyright policy)
  • Publisher: AIP Publishing
We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (112¯2) and (1¯1¯22¯) GaN bulk substrates. In incorporation efficiency is higher for (112¯2) InGaN, which enables higher temperature growth of InGaN and is beneficial for quality improvement. InGaN/GaN quantum wells (QWs) on (112¯2) show abrupt interfaces, but those on (1¯1¯22¯) tend to form three-dimensional nanofacets. Differences in growth temperature and structures of the (112¯2) and (1¯1¯22¯) QWs cause higher internal quantum efficiencies of the (112¯2) [ (1¯1¯22¯)] QWs at shorter (longer) wavelengths.
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free text keywords: Physics and Astronomy (miscellaneous), Heterojunction, Optoelectronics, business.industry, business, Epitaxy, Quantum efficiency, Nanolithography, Quantum well, Wavelength, Wide-bandgap semiconductor, Materials science, Metalorganic vapour phase epitaxy
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Article . 2015
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